Listado de producción
Listando 230 resultados
| Titulo | Año | Tipo |
|---|---|---|
Performance of FDSOI double-gate dual-doped reconfigurable FETs
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, JOSÉ LUIS PADILLA DE LA TORRE, Carlos Navarro Moral, Cristina Medina Bailón, Carlos Márquez González, José Carlos Galdón Gil
|
2022 | Articulo |
Improved inter-device variability in graphene liquid gate sensors by laser treatment
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral, Carlos Márquez González, José Carlos Galdón Gil
|
2022 | Articulo |
Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator
FRANCISCO J GAMIZ PEREZ, ANTONIO PALOMARES BAUTISTA, CARLOS SAMPEDRO MATARÍN, Luca Donetti, JOSÉ LUIS PADILLA DE LA TORRE, Carlos Navarro Moral, Cristina Medina Bailón
|
2022 | Articulo |
A Review of Sharp-Switching Band-Modulation Devices
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral
|
2021 | Articulo |
Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Carlos Márquez González
|
2021 | Articulo |
Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator
FRANCISCO J GAMIZ PEREZ
|
2021 | Articulo |
Metamaterial-Based Reconfigurable Intelligent Surface: 3D Meta-Atoms Controlled by Graphene Structures
FRANCISCO J GAMIZ PEREZ, PABLO PADILLA DE LA TORRE, Juan Valenzuela Valdés, Angel Palomares Caballero, Ignacio Parellada Serrano
|
2021 | Articulo |
Performance and reliability in back-gated CVD-grown MoS2 devices
FRANCISCO J GAMIZ PEREZ, Carlos Márquez González
|
2021 | Articulo |
Memory Operation of Z(2)-FET Without Selector at High Temperature
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral
|
2021 | Articulo |
Improved Retention Characteristics of Z(2)-FET Employing Half Back-Gate Control
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral
|
2021 | Articulo |
Synthesis of graphene and other two-dimensional materials
FRANCISCO J GAMIZ PEREZ, Carlos Márquez González
|
2020 | Capítulo de libro |
Biosensors based on two-dimensional materials
FRANCISCO J GAMIZ PEREZ
|
2020 | Capítulo de libro |
Systematic characterization of random telegraph noise and its dependence with magnetic fields in MOSFET devices
FRANCISCO J GAMIZ PEREZ, Carlos Márquez González
|
2020 | Capítulo de libro |
Investigating the transient response of Schottky barrier back-gated MoS2 transistors
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral, Carlos Márquez González, José Carlos Galdón Gil
|
2020 | Articulo |
Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral, Carlos Márquez González
|
2020 | Articulo |
Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, JOSÉ LUIS PADILLA DE LA TORRE, Cristina Medina Bailón
|
2020 | Articulo |
Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral
|
2020 | Articulo |
Detection of COVID-19 disease using graphene-based biosensors
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, JOSÉ LUIS PADILLA DE LA TORRE, Carlos Navarro Moral, Cristina Medina Bailón, Carlos Márquez González
|
2020 | Articulo |
Active Radiation-Hardening Strategy in Bulk FinFETs
FRANCISCO J GAMIZ PEREZ
|
2020 | Articulo |
Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, JOSÉ LUIS PADILLA DE LA TORRE, Cristina Medina Bailón
|
2019 | Capítulo de libro |
A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2019 | Articulo |
On the Low-Frequency Noise Characterization of Z2-FET Devices
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, JOSÉ LUIS PADILLA DE LA TORRE, Carlos Navarro Moral, Carlos Márquez González
|
2019 | Articulo |
Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, JOSÉ LUIS PADILLA DE LA TORRE, Cristina Medina Bailón
|
2019 | Articulo |
Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral, Carlos Márquez González
|
2019 | Articulo |
Thorough Understanding of Retention Time of Z2-FET Memory Operation
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral
|
2019 | Articulo |
Characteristics of band modulation FET on sub 10 nm SOI
FRANCISCO J GAMIZ PEREZ, Carlos Navarro Moral
|
2019 | Articulo |
Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2018 | Articulo |
Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, JOSÉ LUIS PADILLA DE LA TORRE, Cristina Medina Bailón, Carlos Márquez González
|
2018 | Articulo |
Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, JOSÉ LUIS PADILLA DE LA TORRE, Cristina Medina Bailón
|
2018 | Articulo |
Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron¿Hole Bilayer Tunneling Field-Effect Transistor
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2018 | Articulo |
Analysis of the Heterogate Electron¿Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities
FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE, Carlos Navarro Moral, Cristina Medina Bailón
|
2018 | Articulo |
Development of a Multisubband Monte Carlo Simulator for Nanometric Transistors
FRANCISCO J GAMIZ PEREZ (Codirector), CARLOS SAMPEDRO MATARÍN (Codirector), Cristina Medina Bailón (Doctorando)
|
2017 | Tesis Doctoral |
Electrical Characterization of Reliability in Advanced Silicon-On-Insulator Structures for sub-22nm Technologies
FRANCISCO J GAMIZ PEREZ (Codirector), NOEL RODRÍGUEZ SANTIAGO (Codirector), Carlos Márquez González (Doctorando)
|
2017 | Tesis Doctoral |
Systematic Method for Electrical Characterization of Random Telegraph Noise in MOSFETs
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Márquez González
|
2017 | Articulo |
Confinement Orientation Effects in S/D Tunneling
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, Cristina Medina Bailón
|
2017 | Articulo |
Implementation of Band-to-Band Tunneling Phenomena in a Multi-Subband Ensemble Monte Carlo Simulator: Application to Silicon TFETs
FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE, Cristina Medina Bailón
|
2017 | Articulo |
Implementation of Band-to-Band Tunneling Phenomena in Multi-Subband-Ensemble Monte Carlo simulator: Application to Silicon TFETs
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, JOSÉ LUIS PADILLA DE LA TORRE, Cristina Medina Bailón
|
2017 | Articulo |
Extended Analysis of the Z2FET: operation as capacitorless eDRAM
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Navarro Moral
|
2017 | Articulo |
Insights on the body charging and noise generation by impact ionization in fully depleted SOI MOSFETs
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Márquez González
|
2017 | Articulo |
Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2017 | Articulo |
Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Carlos Navarro Moral
|
2017 | Articulo |
Application of the Pseudo-MOSFET Technique on Silicon-On-Insulator Wafers
FRANCISCO J GAMIZ PEREZ (Codirector), NOEL RODRÍGUEZ SANTIAGO (Codirector)
|
2016 | Tesis Doctoral |
Scribing Graphene Circuits
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Márquez González
|
2016 | Capítulo de libro |
Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Márquez González
|
2016 | Articulo |
Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor
FRANCISCO J GAMIZ PEREZ, ANTONIO PALOMARES BAUTISTA, JOSÉ LUIS PADILLA DE LA TORRE
|
2016 | Articulo |
Electrical Characterization and Conductivity Optimization of Laser Reduced Graphene Oxide on Insulator using Point-Contact Methods
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Márquez González
|
2016 | Articulo |
Comment on “Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening”
FRANCISCO J GAMIZ PEREZ, ANTONIO PALOMARES BAUTISTA, JOSÉ LUIS PADILLA DE LA TORRE
|
2016 | Articulo |
Impact of non uniform strain configuration on transport properties for FD14+ devices
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, Cristina Medina Bailón
|
2016 | Articulo |
Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor
FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2016 | Articulo |
Switching Behavior Constraint in the Heterogate Electron-Hole Bilayer Tunnel FET: the Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations
FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2016 | Articulo |
RAM memory cell comprising a transistor
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2015 | Patente de invención |
Caracterización Eléctrica de Grafeno sobre Aislante Mediante Técnicas de Puntas de Contacto
FRANCISCO J GAMIZ PEREZ (Codirector), NOEL RODRÍGUEZ SANTIAGO (Director)
|
2015 | Proyecto fin de carrera |
Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2015 | Articulo |
Mobility and Capacitance Comparison in Scaled InGaAs Versus Si Trigate MOSFETs
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2015 | Articulo |
The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2015 | Articulo |
Experimental developments of A2RAM memory cells on SOI and bulk substrates
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Navarro Moral, Carlos Márquez González
|
2015 | Articulo |
Tunability of effective masses on MoS2 monolayers
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, Luca Donetti, BLANCA BIEL RUIZ
|
2015 | Articulo |
Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, Enrique González Marín
|
2015 | Articulo |
Analytic drain current model for III-V cylindrical nanowire transistors
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2015 | Articulo |
Implicit versus explicit momentum relaxation time solution for semiconductor nanowires
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2015 | Articulo |
Analytic Potential and Charge Model of Semiconductor Quantum Wells
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2015 | Articulo |
Strain effects on effective masses for MoS2 monolayers
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, Luca Donetti, BLANCA BIEL RUIZ
|
2015 | Articulo |
Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2015 | Articulo |
Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor
FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE, Cristina Medina Bailón
|
2015 | Articulo |
Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2015 | Articulo |
Comment on germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate
FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2015 | Articulo |
Role of the gate in ballistic nanowire SOI MOSFETs
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2015 | Articulo |
Direct Characterization of Impact Ionization Current in Silicon-On-Insulator Body-Contacted MOSFETs
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, NOEL RODRÍGUEZ SANTIAGO, Carlos Márquez González
|
2015 | Articulo |
Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2015 | Articulo |
Special memory mechanisms in SOI devices
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Navarro Moral
|
2015 | Articulo |
Design, Simulation and Electrical Characterization of A2RAM Memory Cells
FRANCISCO J GAMIZ PEREZ (Director), NOEL RODRÍGUEZ SANTIAGO (Director), Carlos Navarro Moral (Doctorando)
|
2014 | Tesis Doctoral |
Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2014 | Articulo |
Tri-Dimensional A2-RAM Cell: Entering the Third Dimension
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Navarro Moral, Carlos Márquez González
|
2014 | Capítulo de libro |
In-Situ Characterization of Bias Instability in Bare SOI Wafers by Pseudo-MOSFET Technique
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Márquez González
|
2014 | Articulo |
A parallel deterministic solver for the Schrödinger–Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo,
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, JOSE MIGUEL MANTAS RUIZ, CARLOS SAMPEDRO MATARÍN
|
2014 | Articulo |
Theoretical interpretation of the electron mobility behavior in InAs nanowires
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2014 | Articulo |
Influence of alloy disorder scattering on the hole mobility of SiGe nanowires
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Luca Donetti, Enrique González Marín
|
2014 | Articulo |
MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON INSULATOR MOSFETs
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2014 | Capítulo de libro |
Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2014 | Articulo |
Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2014 | Articulo |
Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2014 | Articulo |
Caracterización de celdas de memoria 1T-DRAM en el laboratorio de nanoelectrónica
FRANCISCO J GAMIZ PEREZ (Director), NOEL RODRÍGUEZ SANTIAGO (Director), Carlos Márquez González (Autor/a)
|
2013 | Proyecto fin de carrera |
Caracterización Eléctrica Avanzada de Semiconductores en el Laboratorio de Nanoelectrónica
FRANCISCO J GAMIZ PEREZ (Director), NOEL RODRÍGUEZ SANTIAGO (Director), Carlos Márquez González (Autor/a)
|
2013 | Proyecto fin de carrera |
An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS
|
2013 | Articulo |
An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
|
2013 | Articulo |
Physical Modeling of III-V Nanowires
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2013 | Capítulo de libro |
A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2013 | Articulo |
Ab initio validation of continuum models parametrizations for ultrascaled SOI interfaces
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, Luca Donetti, BLANCA BIEL RUIZ
|
2013 | Articulo |
Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
FRANCISCO J GAMIZ PEREZ, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO, Carlos Navarro Moral
|
2013 | Articulo |
Analytical Gate Capacitance Modeling of III-V Nanowire Transistors
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2013 | Articulo |
An in-depth simulation study of thermal reset transitions in resistive switching memories
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS
|
2013 | Articulo |
Two-band k¿.p model for Si-(110) electron devices
FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, BLANCA BIEL RUIZ
|
2013 | Articulo |
MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2013 | Articulo |
Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2013 | Articulo |
On the extension of ET-FDSOI roadmap for 22 nm node and beyond
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2013 | Articulo |
An analytical mobility model for square Gate-All-Around MOSFETs
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ
|
2013 | Articulo |
Effect of confined acoustic phonons on the electron mobility of rectangular nanowires
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Luca Donetti
|
2013 | Articulo |
Bias-Engineered Mobility in Advanced FD-SOI MOSFETs
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2013 | Articulo |
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs
FRANCISCO J GAMIZ PEREZ
|
2013 | Articulo |
The Effect of Quantum Confinement on Tunneling Field-Effect Transistors with high-k Gate Dielectric
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2013 | Articulo |
Sistema de identificación por radio frecuencia
FRANCISCO J GAMIZ PEREZ (Director), NOEL RODRÍGUEZ SANTIAGO (Director), Carlos Márquez González (Autor/a)
|
2012 | Proyecto fin de carrera |
Study and Simulation of Advanced Si-based Nanodevices: SBMOSFETs and Tunnel FETs
FRANCISCO J GAMIZ PEREZ (Director)
|
2012 | Tesis Doctoral |
Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: the role of crystallographic orientation
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, Luca Donetti
|
2012 | Articulo |
Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2012 | Articulo |
Simulation of Fabricated 20-nm Schottky Barrier MOSFETs on SOI: Impact of Barrier Lowering
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2012 | Articulo |
Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
|
2012 | Articulo |
Impact of Quantum Confinement on Gate Threshold Voltage and Subthreshold Swings in Double Gate Tunnel FETs
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2012 | Articulo |
A Simple Approach to Quantum Confinement in Tunneling Field-Effect Transistors
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, JOSÉ LUIS PADILLA DE LA TORRE
|
2012 | Articulo |
Experimental demonstration of capacitorless A2RAM memory cells on Silicon-On Insulator
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Navarro Moral
|
2012 | Articulo |
Multibranch Mobility Analysis for the Characterization of FDSOI Transistors
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, Carlos Navarro Moral
|
2012 | Articulo |
Two Dimensional Monte Carlo Simulation of DGSOI MOSFET Misalignment
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2012 | Articulo |
Caracterización de Transistores FD-SOI orientada al desarrollo de celdas de Memoria 1T-DRAM
FRANCISCO J GAMIZ PEREZ (Codirector), NOEL RODRÍGUEZ SANTIAGO (Director)
|
2011 | Trabajo conducente a obtención de DEA |
Caracterización de Obleas de Silicio Sobre Aislante mediante la técnica del Psuedo-Transistor
FRANCISCO J GAMIZ PEREZ (Codirector), NOEL RODRÍGUEZ SANTIAGO (Director)
|
2011 | Trabajo conducente a obtención de DEA |
CAPACITOR-LESS A-RAM SOI MEMORY: PRINCIPLES, SCALING AND EXPECTED PERFORMANCE
FRANCISCO J GAMIZ PEREZ
|
2011 | Articulo |
SIMULATION OF THE ELECTROSTATIC AND TRANSPORT PROPERTIES OF 3D-STACKED GAA SILICON NANOWIRE FETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2011 | Articulo |
SIMULATION OF THE ELECTROSTATIC AND TRANSPORT PROPERTIES OF 3D-STACKED GAA SILICON NANOWIRE FETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ
|
2011 | Articulo |
AN INVERSION CHARGE ANALYTICAL MODEL FOR SQUARE GATE-ALL-AROUND MOSFETS
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, MARÍA JOSÉ IBÁÑEZ PÉREZ, DOMINGO BARRERA ROSILLO, FRANCISCO JAVIER GARCÍA RUIZ
|
2011 | Articulo |
Ultrathin N-channel and P-channel SOI MOSFETs
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, CARLOS SAMPEDRO MATARÍN, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO
|
2011 | Capítulo de libro |
Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2011 | Articulo |
Capacitor-less A-RAM SOI memory: principles, scaling and expected performance
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2011 | Articulo |
Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, NOEL RODRÍGUEZ SANTIAGO, BLANCA BIEL RUIZ
|
2011 | Articulo |
Novel Capacitor-Less 1T-DRAM Cell for 22nm Node compatible with Bulk and SOI Substrates
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2011 | Articulo |
Three-Interfacce pseudo-MOSFET models for he characterization of SOI wafers with ultrathin film and BOX
FRANCISCO J GAMIZ PEREZ
|
2011 | Articulo |
Three-Interfacce pseudo-MOSFET models for he characterization of SOI wafers with ultrathin film and BOX
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2011 | Articulo |
Surface roughness scattering model for arbitrarily oriented silicon nanowires
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, BLANCA BIEL RUIZ
|
2011 | Articulo |
Influence of Orientation, Geometry and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, BLANCA BIEL RUIZ
|
2011 | Articulo |
Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
FRANCISCO J GAMIZ PEREZ, Luca Donetti
|
2011 | Articulo |
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
FRANCISCO J GAMIZ PEREZ, Luca Donetti
|
2011 | Articulo |
In-depth study of quantum effects in SOI DGMOSFETs for different crystallographic orientations
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
|
2011 | Articulo |
SEMICONDUCTOR ON INSULATOR MATERIALS FOR NANOELECTRONICS APPLICATIONS
FRANCISCO J GAMIZ PEREZ
|
2011 | Libro |
Semiconductor-On-Insulator Materials for Nanoelectronics Applications
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS
|
2011 | Libro |
RAM MEMORY ELEMENT WITH ONE TRANSISTOR
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2010 | Patente de invención |
POINT MÉMOIRE RAM À UN TRANSISTOR
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2010 | Patente de invención |
A MODEL OF THE GATE CAPACITANCE OF SURROUNDING GATE TRANSISTORS: COMPARISON WITH DOUBLE-GATE MOSFETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Luca Donetti
|
2010 | Articulo |
AN ANALYTICAL I-V MODEL FOR SURROUNDING-GATE TRANSISTORS THAT INCLUDES QUANTUM AND VELOCITY OVERSHOOT EFFECTS
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN, NOEL RODRÍGUEZ SANTIAGO
|
2010 | Articulo |
AN IN-DEPTH SIMULATION STUDY OF COULOMB MOBILITY IN ULTRA-THIN-BODY SOI MOSFETS
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS
|
2010 | Articulo |
A-RAM MEMORY CELL: CONCEPT AND OPERATION
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2010 | Articulo |
AN ANALYTICAL MODEL FOR SQUARE GAA MOSFETS INCLUDING QUANTUM EFFECTS
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, DOMINGO BARRERA ROSILLO, FRANCISCO JAVIER GARCÍA RUIZ
|
2010 | Articulo |
HOLE TRANSPORT IN DGSOI DEVICES: ORIENTATION AND SILICON THICKNESS EFFECTS
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO
|
2010 | Articulo |
MULTI-SUBBAND MONTE CARLO STUDY OF DEVICE ORIENTATION EFFECTS IN ULTRA-SHORT CHANNEL DGSOI
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN
|
2010 | Articulo |
WHY THE UNIVERSAL MOBILITY IS NOT
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2010 | Articulo |
DISPOSITIVOS ELECTRÓNICOS: PROBLEMAS RESUELTOS. 2ª EDICIÓN
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
|
2010 | Libro |
NON-METALLIC EFFECTS IN SILICIDED GATE MOSFETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, NOEL RODRÍGUEZ SANTIAGO
|
2009 | Articulo |
MONTE CARLO SIMULATION OF NANOELECTRONIC DEVICES
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO
|
2009 | Articulo |
THE EFFECT OF SURFACE ROUGHNESS SCATTERING ON HOLE MOBILITY IN DOUBLE GATE SILICON-ON-INSULATOR DEVICES
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO
|
2009 | Articulo |
COMPARISON OF THE ELECTROSTATICS OF BULK AND SOI TRIGATE MOSFETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ
|
2009 | Articulo |
SIMULATION OF HOLE MOBILITY IN DGSOI TRANSISTORS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO
|
2009 | Articulo |
HOLE MOBILITY IN ULTRATHIN DOUBLE-GATE SOI DEVICES: THE EFFECT OF ACOUSTIC PHONON CONFINEMENT
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO
|
2009 | Articulo |
SIMULATION OF HOLE MOBILITY IN TWO-DIMENSIONAL SYSTEMS
FRANCISCO J GAMIZ PEREZ, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO
|
2009 | Articulo |
EQUIVALENT OXIDE THICKNESS OF TRIGATE SOI MOSFETS WITH HIGH-K MATERIALS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Luca Donetti
|
2009 | Articulo |
REVISITED PSEUDO-MOSFET MODELS FOR THE CHARACTERIZATION OF ULTRATHIN SOI WAFERS
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2009 | Articulo |
SILICON ON INSULATOR TECHNOLOGY AND DEVICES 14
FRANCISCO J GAMIZ PEREZ
|
2009 | Libro |
CHARACTERIZATION, MODELLING AND SIMULATION OF DECANANOMETER SOI MOSFETS
FRANCISCO J GAMIZ PEREZ (Director), NOEL RODRÍGUEZ SANTIAGO (Doctorando)
|
2008 | Tesis Doctoral |
A QUANTUM-CORRECTED MONTE CARLO SIMULATION OF DOUBLE GATE SILICON ON INSULATOR TRANSISTORS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2008 | Review |
ACCURATE MODELING OF METAL/HFO2/SI CAPACITORS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2008 | Articulo |
MONTE CARLO SIMULATION OF LOW-FIELD MOBILITY IN STRAINED DOUBLE GATE SOI TRANSISTORS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN, NOEL RODRÍGUEZ SANTIAGO
|
2008 | Articulo |
THE QUANTIZATION IMPACT OF ACCUMULATED CARRIERS IN SILICIDE-GATED MOSFETS
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2008 | Articulo |
MODELING THE EQUIVALENT OXIDE THICKNESS OF SURROUNDING GATE SOI DEVICES WITH HIGH-KAPPA INSULATORS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Luca Donetti
|
2008 | Articulo |
COULOMB SCATTERING IN HIGH? GATE STACK SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS
FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, Luca Donetti
|
2008 | Articulo |
MODELING THE CENTROID AND THE INVERSION CHARGE IN CYLINDRICAL SURROUNDING GATE MOSFETS, INCLUDING QUANTUM EFFECTS
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
|
2008 | Articulo |
Nuevas tecnologías en los dispositivos electrónicos
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, CARLOS SAMPEDRO MATARÍN, ANDRÉS MARÍA ROLDÁN ARANDA, JUAN ANTONIO JIMENEZ TEJADA, JUAN ENRIQUE CARCELLER BELTRAN
|
2008 | Libro |
ELECTRON TRANSPORT IN SILICON-ON-INSULATOR NANODEVICES
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2007 | Capítulo de libro |
A COMPREHENSIVE STUDY OF THE CORNER EFFECTS ON PI-GATE SOI MOSFETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2007 | Articulo |
MOBILITY IN MULTIGATE MOSFETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ
|
2007 | Capítulo de libro |
QUANTUM ENSEMBLE MONTE CARLO SIMULATION OF SILICON-BASED NANODEVICES
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, CARLOS SAMPEDRO MATARÍN
|
2007 | Articulo |
QUANTUM-MECHANICAL EFFECTS IN MULTIPLE-GATE MOSFETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2007 | Articulo |
AN ELECTRON MOBILITY MODEL FOR ULTRA-THIN GATE-OXIDE MOSFETS INCLUDING THE CONTRIBUTION OF REMOTE SCATTERING MECHANISMS
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2007 | Articulo |
CALCULATION OF THE PHONON-LIMITED MOBILITY IN SILICON GATE ALL-AROUND MOSFETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN
|
2007 | Articulo |
MONTE CARLO SIMULATION OF HALL AND MAGNETORESISTANCE MOBILITY IN SOI DEVICES
FRANCISCO J GAMIZ PEREZ, Luca Donetti
|
2007 | Articulo |
PHONON SCATTERING IN SI-BASED NANODEVICES
FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO
|
2007 | Articulo |
EVIDENCE FOR MOBILITY ENHANCEMENT IN DOUBLE-GATE SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2007 | Articulo |
A THEORETICAL INTERPRETATION OF MAGNETORESISTANCE MOBILITY IN SILICON INVERSION LAYERS
FRANCISCO J GAMIZ PEREZ, Luca Donetti
|
2007 | Articulo |
A COMPREHENSIVE STUDY OF THE CORNER EFFECTS IN PI-GATE SOI MOSFETS INCLUDING QUANTUM EFFECTS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN, Luca Donetti
|
2007 | Articulo |
MODELING OF INVERSION LAYER CENTROID AND POLYSILICON DEPLETION EFFECTS ON ULTRATHIN-GATE-OXIDE MOSFET BEHAVIOR: THE INFLUENCE OF CRYSTALLOGRAPHIC ORIENTATION
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO
|
2007 | Articulo |
SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES 13
FRANCISCO J GAMIZ PEREZ
|
2007 | Libro |
ESTUDIO, CARACTERIZACIÓN Y SIMULACIÓN DE TRANSISTORES CON MODULACIÓN DE LA VELOCIDAD EN SILICIO
Andrés Godoy Medina (Director), FRANCISCO J GAMIZ PEREZ (Director), CARLOS SAMPEDRO MATARÍN (Doctorando)
|
2006 | Tesis Doctoral |
DETERMINISTIC NUMERICAL SIMULATION OF 1D KINETIC DESCRIPTIONS OF BIPOLAR ELECTRON DEVICES
FRANCISCO J GAMIZ PEREZ, PEDRO GONZÁLEZ RODELAS
|
2006 | Capítulo de libro |
CONFINED ACOUSTIC PHONONS IN ULTRATHIN SOI LAYERS
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, Luca Donetti
|
2006 | Articulo |
CHARACTERIZATION OF ELECTRON TRANSPORT AT HIGH FIELDS IN SILICON-ON-INSULATOR DEVICES: A MONTE CARLO STUDY
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, NOEL RODRÍGUEZ SANTIAGO, ANDRÉS MARÍA ROLDÁN ARANDA
|
2006 | Articulo |
ACOUSTIC PHONON CONFINEMENT IN SILICON NANOLAYERS: EFFECT ON ELECTRON MOBILITY
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, Luca Donetti
|
2006 | Articulo |
THE MULTIVALLEY EFFECTIVE CONDUCTION BAND-EDGE METHOD FOR MONTE CARLO SIMULATION OF NANOSCALE STRUCTURES
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, CARLOS SAMPEDRO MATARÍN
|
2006 | Articulo |
INFLUENCE OF ACOUSTIC PHONON CONFINEMENT ON ELECTRON MOBILITY IN ULTRATHIN SILICON ON INSULATOR LAYERS
FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, CARLOS SAMPEDRO MATARÍN, Luca Donetti, NOEL RODRÍGUEZ SANTIAGO
|
2006 | Articulo |
IMPLICATIONS OF NONPARABOLICITY, WARPING, AND INELASTIC PHONON SCATTERING ON HOLE TRANSPORT IN PURE SI AND GE WITHIN THE EFFECTIVE MASS FRAMEWORK
SALVADOR RODRIGUEZ BOLIVAR, FRANCISCO J GAMIZ PEREZ, JUAN ENRIQUE CARCELLER BELTRAN
|
2005 | Articulo |
MONTE CARLO SIMULATION OF SILICON-BASED VELOCITY MODULATION TRANSISTORS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2005 | Articulo |
MONTE CARLO SIMULATION OF DOUBLE GATE SILICON ON INSULATOR DEVICES OPERATED AS VELOCITY MODULATION TRANSISTORS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2005 | Articulo |
INFLUENCE OF CONFINED ACOUSTIC PHONONS ON THE ELECTRON MOBILITY IN ULTRATHIN SILICON-ONINSULATOR LAYERS
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2005 | Articulo |
A COMPREHENSIVE STUDY OF CARRIER VELOCITY MODULATION IN DGSOI TRANSISTORS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2005 | Articulo |
EFFECTS OF NONPARABOLIC BANDS IN QUANTUM WIRES
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ
|
2005 | Articulo |
ACCURATE DETERMINISTIC NUMERICAL SIMULATION OF P-N JUNCTIONS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, PEDRO GONZÁLEZ RODELAS
|
2004 | Articulo |
MONTE CARLO SIMULATION OF ELECTRON VELOCITY OVERSHOOT IN DGSOI MOSFETS
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, CARLOS SAMPEDRO MATARÍN
|
2004 | Articulo |
A COMPREHENSIVE STUDY OF VELOCITY OVERSHOOT EFFECTS IN DOUBLE GATE SILICON ON INSULATOR TRANSISTORS
FRANCISCO J GAMIZ PEREZ
|
2004 | Articulo |
TEMPERATURE BEHAVIOUR OF ELECTRON MOBILITY IN DOUBLE-GATE SILICON ON INSULATOR TRANSISTORS
FRANCISCO J GAMIZ PEREZ
|
2004 | Articulo |
IMAGE AND EXCHANGE-CORRELATION EFFECTS IN DOUBLE GATE SILICON-ON-INSULATOR TRANSISTORS
FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, JUAN ENRIQUE CARCELLER BELTRAN
|
2004 | Articulo |
SIMULATION AND MODELLING OF TRANSPORT PROPERTIES IN STRAINED-SI AND STRAINED-SI/SIGE-ON-INSULATOR MOSFETS
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
|
2004 | Articulo |
DOUBLE GATE SILICON ON INSULATOR TRANSISTORS. A MONTE CARLO STUDY
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, JUAN ENRIQUE CARCELLER BELTRAN
|
2004 | Articulo |
ELECTRON MOBILITY IN ULTRATHIN SILICON-ON-INSULATOR LAYERS AT 4.2 K
FRANCISCO J GAMIZ PEREZ
|
2004 | Articulo |
VELOCITY OVERSHOOT IN ULTRATHIN DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTORS
FRANCISCO J GAMIZ PEREZ
|
2004 | Articulo |
IMAGE AND EXCHANGE CORRELATION EFFECTS IN DOUBLE GATE SILICON-ON-INSULATOR TRANSISTORS
FRANCISCO J GAMIZ PEREZ, JUAN ENRIQUE CARCELLER BELTRAN
|
2003 | Articulo |
EFFECT OF POLYSILICON DEPLETION CHARGE ON ELECTRON MOBILITY IN ULTRATHIN OXIDE MOSFETS
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, JUAN ENRIQUE CARCELLER BELTRAN
|
2003 | Articulo |
MODELING OF RETENTION TIME DEGRADATION DUE TO INELASTIC TRAP-ASSISTED TUNNELING IN EEPROM DEVICES
ALBERTO JOSE PALMA LOPEZ, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS
|
2003 | Articulo |
ELECTRON MOBILITY IN DOUBLE GATE SILICON ON INSULATOR TRANSISTORS: SYMMETRIC-GATE VERSUS ASYMMETRIC-GATE CONFIGURATION
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, ANDRÉS MARÍA ROLDÁN ARANDA, JUAN ENRIQUE CARCELLER BELTRAN
|
2003 | Articulo |
SCATTERING OF ELECTRONS IN SILICON INVERSION LAYERS BY REMOTE SURFACE ROUGHNESS
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
|
2003 | Articulo |
STRAINED-SI ON SI1-XGEX MOSFET MOBILITY MODEL
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, ANDRÉS MARÍA ROLDÁN ARANDA, JUAN ENRIQUE CARCELLER BELTRAN
|
2003 | Articulo |
REMOTE COULOMB SCATTERING IN METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS: SCREENING BY ELECTRONS IN THE GATE
FRANCISCO J GAMIZ PEREZ
|
2003 | Articulo |
INFLUENCE OF IMAGE FORCE AND MANY-BODY CORRECTION ON ELECTRON MOBILITY IN ULTRATHIN DOUBLE GATE SILICON ON INSULATOR INVERSION LAYERS
FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, JUAN ENRIQUE CARCELLER BELTRAN
|
2003 | Articulo |
MONTE CARLO SIMULATION OF REMOTE-COULOMB-SCATTERING-LIMITED MOBILITY IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, JUAN ENRIQUE CARCELLER BELTRAN
|
2003 | Articulo |
SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES XI
FRANCISCO J GAMIZ PEREZ
|
2003 | Libro |
SIMULACION DE MOSFETS: CORRIENTE TUNEL DE PUERTA, DISPERSION CULOMBIANA Y AUTOCALENTAMIENTO
ALBERTO JOSE PALMA LOPEZ (Director), FRANCISCO J GAMIZ PEREZ (Director), FRANCISCO JIMENEZ MOLINOS (Doctorando)
|
2002 | Tesis Doctoral |
MONTE CARLO SIMULATION OF ELECTRON MOBILITY IN SILICON-ON-INSULATOR STRUCTURES
JUAN ANTONIO LOPEZ VILLANUEVA, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS
|
2002 | Articulo |
ELECTRON TRANSPORT IN STRAINED SI INVERSION LAYERS GROWN ON SIGE-ON-INSULATOR SUBSTRATES
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS
|
2002 | Articulo |
ON THE ENHANCED ELECTRON MOBILITY IN STRAINED-SILICON INVERSION LAYERS
FRANCISCO J GAMIZ PEREZ
|
2002 | Articulo |
DIRECT AND TRAP-ASSISTED ELASTIC TUNNELING THROUGH ULTRATHIN GATE OXIDES
ALBERTO JOSE PALMA LOPEZ, JUAN ANTONIO LOPEZ VILLANUEVA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS
|
2002 | Articulo |
STRAINED-SI/SIGE-ON-INSULATOR INVERSION LAYERS: THE ROLE OF STRAINED-SI LAYER THICKNESS ON ELECTRON MOBILITY
Andrés Godoy Medina, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
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2002 | Articulo |
COULOMB SCATTERING MODEL FOR ULTRATHIN SILICON-ON-INSULATOR INVERSION LAYERS
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS
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2002 | Articulo |
MONTE CARLO SIMULATION OF ELECTRON TRANSPORT IN SILICON-ON-INSULATOR DEVICES
JUAN ANTONIO LOPEZ VILLANUEVA, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, JUAN ENRIQUE CARCELLER BELTRAN
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2001 | Capítulo de libro |
FOREWORD
JUAN ANTONIO LOPEZ VILLANUEVA, FRANCISCO J GAMIZ PEREZ
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2001 | Articulo |
ELECTRON TRANSPORT IN ULTRATHIN DOUBLE-GATE SOI DEVICES
JUAN ANTONIO LOPEZ VILLANUEVA, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, JUAN ENRIQUE CARCELLER BELTRAN
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2001 | Articulo |
ELECTRON TRANSPORT IN SILICON-ON-INSULATOR DEVICES
JUAN ANTONIO LOPEZ VILLANUEVA, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, JUAN ENRIQUE CARCELLER BELTRAN
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2001 | Articulo |
A SIMPLE SUBTHRESHOLD SWING MODEL FOR SHORT CHANNEL MOSFETS
ALBERTO JOSE PALMA LOPEZ, Andrés Godoy Medina, JUAN ANTONIO LOPEZ VILLANUEVA, FRANCISCO J GAMIZ PEREZ, JUAN ANTONIO JIMENEZ TEJADA
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2001 | Articulo |
PHYSICAL MODEL FOR TRAP-ASSISTED INELASTIC TUNNELING IN METAL- OXIDE-SEMICONDUCTOR STRUCTURES
ALBERTO JOSE PALMA LOPEZ, JUAN ANTONIO LOPEZ VILLANUEVA, FRANCISCO J GAMIZ PEREZ, FRANCISCO JIMENEZ MOLINOS, JESUS BANQUERI OZAEZ
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2001 | Articulo |
ROLE OF SURFACE-ROUGHNESS SCATTERING IN DOUBLE GATE SILICON-ON- INSULATOR INVERSION LAYERS
JUAN ANTONIO LOPEZ VILLANUEVA, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
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2001 | Articulo |
MONTE CARLO SIMULATION OF DOUBLE-GATE SILICON-ON-INSULATOR INVERSION LAYERS: THE ROLE OF VOLUME INVERSION
FRANCISCO J GAMIZ PEREZ
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2001 | Articulo |
IMPROVING STRAINED-SI ON SI1-XGEX DEEP SUBMICRON MOSFETS PERFORMANCE BY MEANS OF A STEPPED DOPING PROFILE
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
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2001 | Articulo |
STRAINED-SI ON SI1-XGEX MOSFET INVERSION LAYER CENTROID MODELING
Andrés Godoy Medina, JUAN ANTONIO LOPEZ VILLANUEVA, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
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2001 | Articulo |
DISPOSITIVOS ELECTRÓNICOS : PROBLEMAS RESUELTOS
JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
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2001 | Libro |
DEEP SUBMICROMETER SOI MOSFET DRAIN CURRENT MODEL INCLUDING SERIES RESISTANCE, SELF-HEATING AND VELOCITY OVERSHOOT EFFECTS
JUAN ANTONIO LOPEZ VILLANUEVA, JUAN B. ROLDAN ARANDA, FRANCISCO J GAMIZ PEREZ
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2000 | Articulo |
INFLUENCE OF TECHNOLOGICAL PARAMETERS ON THE BEHAVIOR OF THE HOLE EFFECTIVE MASS IN SIGE STRUCTURES
ALBERTO JOSE PALMA LOPEZ, SALVADOR RODRIGUEZ BOLIVAR, FRANCISCO J GAMIZ PEREZ, JUAN ENRIQUE CARCELLER BELTRAN
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2000 | Articulo |
EFFECTS OF THE INVERSION-LAYER CENTROID ON THE PERFORMANCE OF DOUBLE-GATE MOSFET’S
ALBERTO JOSE PALMA LOPEZ, JUAN ANTONIO LOPEZ VILLANUEVA, FRANCISCO J GAMIZ PEREZ, JESUS BANQUERI OZAEZ
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2000 | Articulo |
Implicit versus explicit momentum relaxation time solution for semiconductor nanowires
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, Enrique González Marín
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- | Articulo |
Mobility and capacitance comparison in scaled InGaAs vs Si Trigate MOSFETs
Andrés Godoy Medina, FRANCISCO J GAMIZ PEREZ, FRANCISCO JAVIER GARCÍA RUIZ, Enrique González Marín
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- | Articulo |